金属诱导横向结晶,Metal-induced lateral crystallization
1)Metal-induced lateral crystallization金属诱导横向结晶
1.Also,problems existing in electric field-aided metal-induced lateral crystallization were discussed.对电场增强金属诱导横向结晶的相关问题进行了探讨,指出适当强度的电场可显著加快横向诱导结晶的速率,但更强电场则会降低该速率,基于电迁移效应对该现象进行了解释。
英文短句/例句
1.Hydrogenation Effects on the Hot-Carrier Degradation of MILC n-Type Poly-Si TFTs;氢化对金属诱导横向结晶n型多晶硅TFT热载流子退化的影响
2.Degradation Behaviors of Metal Induced Lateral Crystallized n-type Polysilicon Thin Film Transistors under DC Bias Stresses;金属诱导横向结晶n型薄膜晶体管直流退化机制研究
3.Degradation of Metal-Induced Laterally Crystallized p-Type Polycrystalline Silicon Thin Film Transistors under DC Bias Stressp型金属诱导横向结晶多晶硅TFT直流应力下的退化研究
4.Degradation Research of Metal Induced Lateral Crystallized N-Type Polysilicon Thin Film Transistors under DC and AC Bias Stresses;N型金属诱导横向结晶TFT交直流应力下的器件退化研究
5.An Investigation on Leakage Current Characters and Mechanisms of Metal-induced Laterally Crystallized n-type Polysilicon Thin Film Transistors under Hot Carrier Stress;金属诱导横向结晶n型多晶硅薄膜晶体管热载流子应力下漏电特性及机制研究
6.Effect of External Electric Field on Lateral Crystallization of a-Si Induced by Some Metals外加电场对金属诱导非晶硅横向结晶的影响
7.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅锗薄膜的金属诱导结晶
8.Field Aided Lateral Crystallization of Amorphous Silicon Induced by Ni and Its Eletromigration Effect电场增强Ni诱导非晶硅横向结晶及其电迁移效应
9.Removal and Recovery of Heavy Metals from Wastewater by Induced Crystallization诱导结晶法去除和回收废水中的重金属
10.Synthesis and Crystal Structures of Metal Complexes with 2,2"-Biimidazole Induced by Rigid Ligand 2,2"-Bipyridine刚性配体2,2"-联吡啶诱导的2,2"-双咪唑金属配合物的合成与晶体结构
11.Influence of Cu-induced layer on microstructure of poly-Si films deposited by hot-wire chemical vapor deposition金属Cu诱导层对热丝法制备多晶硅薄膜微结构的影响
12.double level polysilicon mos structure双层多晶硅金属氧化物半导体结构
13.Fabrication of Hydrogenarated Amorphous Silicon Thin Films by PECVD and the Study of Metal Induced Crystallization;PECVD法制备氢化非晶硅薄膜及其金属诱导晶化研究
14.Sintered metal friction materials-Determination of transverse rupture strengthGB/T10422-1989烧结金属摩擦材料横向断裂强度的测定
15.Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
16.TGF-β Induces Matrix Metalloproteinase Secretion in Lens Epithelial Cells;TGF-β诱导晶状体上皮细胞基质金属蛋白酶表达的实验研究
17.The Mechanism of Structural Change in Au～(3+)-doped BK7 Glass Irradiated by Femtosecond Laser;激光诱导贵金属掺杂玻璃的微结构变化机理
18.Micro-and Nano-Structures on Metal Induced by Femtosecond Laser Radiation飞秒激光辐射诱导金属表面微纳结构研究
相关短句/例句
metal-induced unilateral crystallization金属单向诱导横向晶化
3)electric field aided lateral crystallization(FALC)电场增强金属诱导横向结晶
4)MILC金属诱导横向晶化
1.,the metal-induced lateral crystallization(MILC),excimer laser annealing(ELA) and inductively coupled plasma CVD(ICP-CVD),with their advantages and disadvantages compared wi.本文系统介绍了低温多晶硅薄膜的三种制备方法—金属诱导横向晶化法、准分子激光晶化法和电感耦合等离子体化学气相沉积法的原理和研究进展,比较了它们之间各自的优缺点,最后对该领域的发展前景进行了展望。
2.The principles and progress of LTPS preparation methods including metal induced lateral crystallization(MILC),excimer laser annealing(ELA),catalytic chemical vapor deposition(Cat-CVD) and inductively coupled plasma chemical vapor deposition(ICP-CVD) were systematically introduced.系统介绍了金属诱导横向晶化法、准分子激光晶化法、触媒化学气相沉积法(Cat-CVD)以及电感耦合等离子体化学气相沉积法(ICP-CVD)制备低温多晶硅薄膜的原理及进展。
3.Process and material characterization of crystallization of amorphous silicon(a-Si) by metal-induced crystallization(MIC) and metal-induced lateral crystallization(MILC) using sputtered Ni on(amorphous) silicon film to prepare polysilicon(p-Si) film were investigated.对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。
5)metal induced lateral crystallization金属诱导横向晶化
1.Poly-Si TFT was fabricated at low temperature bymetal induced lateral crystallization.采用金属诱导横向晶化法低温研制了 poly SiTFT。
6)metal induced unilateral crystallization金属诱导单一方向横向晶化
1.Based onmetal induced unilateral crystallization (MIUC) technology,poly-Si thin film transistor (poly-Si TFT) display scan driving circuit and data driving circuit for AM-LCD and AM-OLED were developed,which can be made with the fabrication processes compactable with poly-Si TFT active matrix.以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUCpoly-SiTFT)为基础,研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路。
延伸阅读
横向结晶分子式：CAS号：性质：在应力场作用下结晶时，结晶只沿垂直于应力的方向进行。高聚物结晶包括成核和晶体生长二阶段。在静态下结晶形成球晶。在有外应力下，应力加速成核作用，而在应力方向上形成成线排列的晶核称为行核。由于在应力方向上行核密度较大，晶体生长受阻，只能在垂直于应力的方向上自由生长，而形成一种串珠状的球晶结构。
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