金属诱导结晶,metal induced crystallization
1)metal induced crystallization金属诱导结晶
英文短句/例句
1.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅锗薄膜的金属诱导结晶
2.Effect of External Electric Field on Lateral Crystallization of a-Si Induced by Some Metals外加电场对金属诱导非晶硅横向结晶的影响
3.Removal and Recovery of Heavy Metals from Wastewater by Induced Crystallization诱导结晶法去除和回收废水中的重金属
4.Hydrogenation Effects on the Hot-Carrier Degradation of MILC n-Type Poly-Si TFTs;氢化对金属诱导横向结晶n型多晶硅TFT热载流子退化的影响
5.Degradation Behaviors of Metal Induced Lateral Crystallized n-type Polysilicon Thin Film Transistors under DC Bias Stresses;金属诱导横向结晶n型薄膜晶体管直流退化机制研究
6.Degradation of Metal-Induced Laterally Crystallized p-Type Polycrystalline Silicon Thin Film Transistors under DC Bias Stressp型金属诱导横向结晶多晶硅TFT直流应力下的退化研究
7.Degradation Research of Metal Induced Lateral Crystallized N-Type Polysilicon Thin Film Transistors under DC and AC Bias Stresses;N型金属诱导横向结晶TFT交直流应力下的器件退化研究
8.Synthesis and Crystal Structures of Metal Complexes with 2,2"-Biimidazole Induced by Rigid Ligand 2,2"-Bipyridine刚性配体2,2"-联吡啶诱导的2,2"-双咪唑金属配合物的合成与晶体结构
9.Influence of Cu-induced layer on microstructure of poly-Si films deposited by hot-wire chemical vapor deposition金属Cu诱导层对热丝法制备多晶硅薄膜微结构的影响
10.An Investigation on Leakage Current Characters and Mechanisms of Metal-induced Laterally Crystallized n-type Polysilicon Thin Film Transistors under Hot Carrier Stress;金属诱导横向结晶n型多晶硅薄膜晶体管热载流子应力下漏电特性及机制研究
11.double level polysilicon mos structure双层多晶硅金属氧化物半导体结构
12.Fabrication of Hydrogenarated Amorphous Silicon Thin Films by PECVD and the Study of Metal Induced Crystallization;PECVD法制备氢化非晶硅薄膜及其金属诱导晶化研究
13.Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
14.TGF-β Induces Matrix Metalloproteinase Secretion in Lens Epithelial Cells;TGF-β诱导晶状体上皮细胞基质金属蛋白酶表达的实验研究
15.The Mechanism of Structural Change in Au～(3+)-doped BK7 Glass Irradiated by Femtosecond Laser;激光诱导贵金属掺杂玻璃的微结构变化机理
16.Micro-and Nano-Structures on Metal Induced by Femtosecond Laser Radiation飞秒激光辐射诱导金属表面微纳结构研究
17.metal semiconductor meta金属 半导体 金属结构
18.Effects of Incident Angle on Metal Periodic Structures Induced by Femtosecond Laser Pulses入射角对飞秒激光诱导金属表面周期性结构的影响
相关短句/例句
Metal-induced lateral crystallization金属诱导横向结晶
1.Also,problems existing in electric field-aided metal-induced lateral crystallization were discussed.对电场增强金属诱导横向结晶的相关问题进行了探讨,指出适当强度的电场可显著加快横向诱导结晶的速率,但更强电场则会降低该速率,基于电迁移效应对该现象进行了解释。
3)metal induced crystallization金属诱导晶化
1.Study on the large grain size poly-Si prepared bymetal induced crystallization using nickel chemical source;大尺寸化学Ni源金属诱导晶化多晶硅的研究
2.Amorphous silicon (a Si) films is deposited by PECVD and is crystallized bymetal induced crystallization (MIC) at various temperatures.利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。
4)MIC[英][ma?k][美][ma?k]金属诱导晶化
1.Process and material characterization of crystallization of amorphous silicon(a-Si) by metal-induced crystallization(MIC) and metal-induced lateral crystallization(MILC) using sputtered Ni on(amorphous) silicon film to prepare polysilicon(p-Si) film were investigated.对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。
5)metal induced crystallized poly-crystalline Si film金属诱导多晶硅
6)Metal-induced crystallization金属诱导晶化
1.The method of metal-induced crystallization of amorphous silicon is discussed in this thesis.Poly-Si薄膜采用金属诱导晶化法制备。
延伸阅读
金属横向诱导法(milc)20世纪90年代初发现a-si中加入一些金属如al，cu，au，ag，ni等沉积在a-si∶h上或离子注入到a-si∶h薄膜的内部，能够降低a-si向p-si转变的相变能量，之后对ni/a-si:h进行退火处理以使a-si薄膜晶化，晶化温度可低于500℃。但由于存在金属污染未能在tft中应用。随后发现ni横向诱导晶化可以避免孪晶产生，镍硅化合物的晶格常数与单晶硅相近、低互溶性和适当的相变能量，使用镍金属诱导a-si薄膜的方法得到了横向结晶的多晶硅薄膜。横向结晶的多晶硅薄膜的表面平滑，具有长晶粒和连续晶界的特征，晶界势垒高度低于spc多晶硅的晶界势垒高度，因此，milc tft具有优良的性能而且不必要进行氢化处理。利用金属如镍等在非晶硅薄膜表面形成诱导层，金属ni与a-si在界面处形成nisi2的硅化物，利用硅化物释放的潜热及界面处因晶格失错而提供的晶格位置，a-si原子在界面处重结晶，形成多晶硅晶粒，nisi2层破坏，ni原子逐渐向a-si层的底层迁移，再形成nisi2硅化物，如此反复直a-si层基本上全部晶化，其诱导温度一般在500℃，持续时间在1o小时左右，退火时间与薄膜厚度有关。金属诱导非晶硅晶化法制备多晶硅薄膜具有均匀性高、成本低、相连金属掩蔽区以外的非晶硅也可以被晶化、生长温度在500℃。但是milc目前它的晶化速率仍然不高，并且随着热处理时间的增长速率会降低。我们采用milc和光脉冲辐射相结合的方法，实现了a-si薄膜在低温环境下快速横向晶化。得到高迁移率、低金属污染的多晶硅带。
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